S. De Franceschi CEA/Institute of Nanosciences and Cryogenics and Grenoble Alpes University
时间： 2016-11-07 15:00-2016-11-07 16:00
Among solid-state approaches to quantum computing devices, spin-based silicon quantum bits (qubits) are gaining increasing attention, especially after the recent achievement of long spin coherence times in nuclear-spin-free 28Si [1,2]. At the same time, the enormous engineering know-how and fabrication capabilities of silicon microelectronics industry is foreseen as a clear asset in the challenging task of up-scaling silicon spin qubits toward complex quantum systems, possibly embedding co-integrated classical control electronics. Therefore, the implementation of silicon spin qubits on a foundry-compatible CMOS platform represents a compelling step. With this in mind, we have recently shown that both few-electron  and few-hole quantum dots  can be formed in silicon nanowire transistors based on foundry-compatible, 300-mm silicon-on-insulator technology. In the case of holes, g-factors are found to be anisotropic and gate dependent providing a pathway to electrically driven spin manipulation via the g-tensor modulation resonance mechanism . I will present the first realizations of double quantum dots in dual-gate nanowire transistors. In these devices we have observed the spin-blockade effect (useful for spin readout) [5,6], electrically driven hole-spin resonance, and hole-spin qubit functionality .
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